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Comparison of various common film-forming methods and the films that can be formed
The following lists several film-forming methods commonly used in the electronics industry and compares them with the films they may form.Film formation methods include: PVD (physical vapor deposition), CVD (chemical vapor deposition), coating method, and electroplating method.
Types of films that may be formed: insulating film, metal conductor film, semiconductor film (only CVD method can be used.)
Topnano has a roll-to-roll vacuum sputtering process using the PVD method and a horizontal copper plating thickening process using the electroplating method. It can produce a series of metal foils, composite metal foils, flexible polymer substrate metallized films and other materials for the electronic industry. Welcome to inquire if you need.
Film formation method | PVD (physical vapor deposition) |
CVD (chemical vapor deposition) |
coating method | electroplating method |
Basic techniques | Physical phenomenon application (evaporation, sputtering, ion implantation, etc.) | Applications of Chemical Vapor Phase Reactions. (Excitation method: heat, plasma, light, etc.) |
Applications of electrochemical reactions (Electrolysis - reduction of metal ions at the cathode) |
Liquid coating and hardening (Spin coating, dip coating, spray coating) |
Insulating film | SiO2, Al2O3, SiN, Ferroelectric thin film... (Appropriate target materials need to be selected for sputtering and reactive sputtering) |
SiO2, Si3N4, Ta2O5, Al2O3, ferroelectric thin films, low k films, and others. | 一 | SiO2, ferroelectric thin films, low k films,Polymer film, etc. |
Metal conductor film | Aluminum film, aluminum alloy film, copper film, copper alloy film,High melting point metal, silicide (WSi2, etc.), Nitrides (TiN, etc.) and almost all other metal films. |
High melting point metals (molybdenum, tungsten), aluminum films, copper films, silicides (WSi2, etc.), nitrides (TiN, etc.) and others. |
Copper film, gold film, nickel film, chromium film, etc. | Copper film |
Semiconductor film | 一 | Silicon (epitaxial layer), polysilicon, amorphous silicon | 一 | 一 |
Remarks | As long as the suitable target is selected, almost all metals and insulating films can be formed. (Sputtering and Reactive Sputtering) | Almost all kinds of films can be formed as long as the raw materials can be converted into steam. |
*Electroplating without electric field can also be used. *Copper-plated film is often used for assembly and printed circuit boards. *Plating of aluminum and tungsten is electrochemically impossible. |
*Including coating, solvent removal process, and annealing process. It also includes two ways of dispersing or dissolving the raw materials in the solvent. |